| Anzahl | Preis |
|---|---|
| 1+ | 5.7 EUR |
| 10+ | 3.73 EUR |
| 100+ | 2.75 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.09 EUR |
| 2500+ | 1.97 EUR |
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Technische Details TK20J50D(F) Toshiba
Description: MOSFET N-CH 500V 20A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V, Power Dissipation (Max): 280W, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P(N), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.
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auf Bestellung 198 Stücke: Lieferzeit 21-28 Tag (e) |
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TK20J50D(F) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 20A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 280W Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3P(N) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
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