Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TK20J60W,S1VE

TK20J60W,S1VE Toshiba Semiconductor and Storage

Name: TK20J60W,S1VE
Brand: Toshiba Semiconductor and Storage
SKU: 12468603-3
Price: 6.94 EUR
Availability: InStock

TK20J60W_datasheet_en_20131226.pdf?did=13896&prodName=TK20J60W

Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V

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Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
3+	8.27 EUR
10+	6.94 EUR

Mindestbestellmenge: 3

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Technische Details TK20J60W,S1VE Toshiba Semiconductor and Storage

Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 1mA, Supplier Device Package: TO-3P(N), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V.