auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.94 EUR |
| 25+ | 5.37 EUR |
| 100+ | 4.66 EUR |
| 500+ | 4.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK20J60W,S1VE Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 1mA, Supplier Device Package: TO-3P(N), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V.
Weitere Produktangebote TK20J60W,S1VE nach Preis ab 5.91 EUR bis 10.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK20J60W,S1VE | Hersteller : Toshiba Semiconductor and Storage |
 Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1mA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
TK20J60W,S1VE | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-3PN Magazine |
Produkt ist nicht verfügbar |