TK20J60W,S1VE Toshiba Semiconductor and Storage

Description: X35 PB-F POWER MOSFET TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P(N), Vgs(th) (Max) @ Id: 3.7V @ 1mA, Power Dissipation (Max): 165W (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.