| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.14 EUR |
| 10+ | 10.66 EUR |
| 100+ | 8.63 EUR |
| 500+ | 7.66 EUR |
| 1000+ | 6.78 EUR |
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Technische Details TK20J60W,S1VE Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P(N), Vgs(th) (Max) @ Id: 3.7V @ 1mA, Power Dissipation (Max): 165W (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Weitere Produktangebote TK20J60W,S1VE nach Preis ab 15.24 EUR bis 15.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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TK20J60W,S1VE | Toshiba Semiconductor and Storage |
 Description: X35 PB-F POWER MOSFET TRANSISTORInput Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P(N) Vgs(th) (Max) @ Id: 3.7V @ 1mA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK20J60W,S1VE |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.24 EUR |