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TK20V60W5,LVQ

TK20V60W5,LVQ Toshiba Semiconductor and Storage

TK20V60W5_datasheet_en_20160108.pdf?did=28825&prodName=TK20V60W5 Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.32 EUR
Mindestbestellmenge: 2500
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Technische Details TK20V60W5,LVQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 20A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: 4-DFN-EP (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V.

Weitere Produktangebote TK20V60W5,LVQ nach Preis ab 3.08 EUR bis 7.15 EUR

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TK20V60W5,LVQ TK20V60W5,LVQ Hersteller : Toshiba Semiconductor and Storage TK20V60W5_datasheet_en_20160108.pdf?did=28825&prodName=TK20V60W5 Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 4812 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.77 EUR
100+ 4.04 EUR
500+ 3.59 EUR
1000+ 3.08 EUR
Mindestbestellmenge: 4
TK20V60W5,LVQ TK20V60W5,LVQ Hersteller : Toshiba TK20V60W5_datasheet_en_20160108-1916410.pdf MOSFET Power MOSFET N-Channel
auf Bestellung 3875 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.15 EUR
10+ 6.03 EUR
25+ 5.69 EUR
100+ 4.86 EUR
250+ 4.6 EUR
500+ 4.32 EUR
1000+ 3.69 EUR
Mindestbestellmenge: 8
TK20V60W5,LVQ Hersteller : Toshiba 88377891097307178837785425919503tk20v60w5_datasheet_en_20160108.pdf.pdf Trans MOSFET N-CH Si 600V 20A 5-Pin DFN EP T/R
Produkt ist nicht verfügbar
TK20V60W5,LVQ TK20V60W5,LVQ Hersteller : Toshiba 88377891097307178837785425919503tk20v60w5_datasheet_en_20160108.pdf.pdf Trans MOSFET N-CH Si 600V 20A 5-Pin DFN EP T/R
Produkt ist nicht verfügbar
TK20V60W5,LVQ TK20V60W5,LVQ Hersteller : Toshiba 88377891097307178837785425919503tk20v60w5_datasheet_en_20160108.pdf.pdf Trans MOSFET N-CH Si 600V 20A 5-Pin DFN EP T/R
Produkt ist nicht verfügbar