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TK20V60W5,LVQ

TK20V60W5,LVQ Toshiba Semiconductor and Storage

docget.jsp?did=28825&prodName=TK20V60W5
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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100+3.8 EUR
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Technische Details TK20V60W5,LVQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 20A 4DFN, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-DFN-EP (8x8), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR).

Weitere Produktangebote TK20V60W5,LVQ

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TK20V60W5,LVQ TK20V60W5,LVQ Toshiba Semiconductor and Storage docget.jsp?did=28825&prodName=TK20V60W5 Description: MOSFET N-CH 600V 20A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK20V60W5,LVQ TK20V60W5,LVQ Toshiba 5CEACDAB6EFFDCF261E07C48E096E2022F4CB0A4178759059FCB60B198EF96BC.pdf MOSFETs Power MOSFET N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK20V60W5,LVQ TK20V60W5,LVQ Toshiba docget.pdf Trans MOSFET N-CH Si 600V 20A 4-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK20V60W5,LVQ docget.jsp?did=28825&prodName=TK20V60W5
TK20V60W5,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK20V60W5,LVQ 5CEACDAB6EFFDCF261E07C48E096E2022F4CB0A4178759059FCB60B198EF96BC.pdf
TK20V60W5,LVQ
Hersteller: Toshiba
MOSFETs Power MOSFET N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK20V60W5,LVQ docget.pdf
TK20V60W5,LVQ
Hersteller: Toshiba
Trans MOSFET N-CH Si 600V 20A 4-Pin DFN EP T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH