TK22V65X5,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: PB-F POWER MOSFET TRANSISTOR DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 6.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK22V65X5,LQ Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.1mA, Supplier Device Package: 4-DFN-EP (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V.
Weitere Produktangebote TK22V65X5,LQ nach Preis ab 6.76 EUR bis 13.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TK22V65X5,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.1mA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
 |
TK22V65X5,LQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 650V 22A 5-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
TK22V65X5,LQ | Hersteller : Toshiba |
MOSFET Pb-F POWER MOSFET TRANSISTOR DFN 8?8 PD=180W F=1MHZ |
Produkt ist nicht verfügbar |