auf Bestellung 450 Stücke:
Lieferzeit 78-82 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.87 EUR |
| 10+ | 7.73 EUR |
| 50+ | 6.69 EUR |
| 100+ | 6.25 EUR |
| 250+ | 6.16 EUR |
| 500+ | 5.88 EUR |
| 1000+ | 5.86 EUR |
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Technische Details TK25A60X5,S5X Toshiba
Description: MOSFET N-CH 600V 25A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.2mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V.
Weitere Produktangebote TK25A60X5,S5X
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK25A60X5,S5X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 25A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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TK25A60X5,S5X | Hersteller : Toshiba |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220SIS Magazine |
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