| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.87 EUR |
| 10+ | 7.38 EUR |
| 100+ | 5.43 EUR |
| 500+ | 4.82 EUR |
| 1000+ | 4.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK25A60X5,S5X Toshiba
Description: MOSFET N-CH 600V 25A TO220SIS, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4.5V @ 1.2mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TK25A60X5,S5X
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
TK25A60X5,S5X | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 25A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TK25A60X5,S5X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 25A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)