| Anzahl | Preis |
|---|---|
| 1+ | 8.29 EUR |
| 10+ | 4.86 EUR |
| 100+ | 4.31 EUR |
| 5000+ | 3.61 EUR |
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Technische Details TK25A60X5,S5X Toshiba
Description: MOSFET N-CH 600V 25A TO220SIS, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4.5V @ 1.2mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TK25A60X5,S5X
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TK25A60X5,S5X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 25A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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TK25A60X5,S5X | Hersteller : Toshiba |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220SIS Magazine |
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