auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.74 EUR |
| 10+ | 5.6 EUR |
| 25+ | 5.33 EUR |
| 50+ | 4.66 EUR |
| 100+ | 4.52 EUR |
| 250+ | 3.92 EUR |
| 500+ | 3.73 EUR |
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Technische Details TK25E60X,S1X Toshiba
Description: MOSFET N-CH 600V 25A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V.
Weitere Produktangebote TK25E60X,S1X
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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TK25E60X,S1X | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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TK25E60X,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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TK25E60X,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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TK25E60X,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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TK25E60X,S1X | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 25A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
Produkt ist nicht verfügbar |