TK25S06N1L,LQ(O Toshiba
| Anzahl | Preis |
|---|---|
| 108+ | 1.33 EUR |
| 144+ | 0.96 EUR |
| 200+ | 0.79 EUR |
| 500+ | 0.65 EUR |
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Technische Details TK25S06N1L,LQ(O Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 57W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 25A, Power dissipation: 57W, Case: DPAK, Gate-source voltage: ±20V, On-state resistance: 15mΩ, Mounting: SMD, Gate charge: 15nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote TK25S06N1L,LQ(O
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK25S06N1L,LQ(O | Hersteller : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; 57W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 57W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
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