TK25S06N1L,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 2000+ | 0.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK25S06N1L,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V.
Weitere Produktangebote TK25S06N1L,LQ nach Preis ab 0.58 EUR bis 2.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TK25S06N1L,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 25A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V |
auf Bestellung 3058 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TK25S06N1L,LQ | Hersteller : Toshiba |
MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK+ PD=57W F=1MHZ |
auf Bestellung 23962 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TK25S06N1L,LQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 25A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |