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TK25S06N1L,LQ

TK25S06N1L,LQ Toshiba Semiconductor and Storage

docget.jsp?did=29750&prodName=TK25S06N1L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.62 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK25S06N1L,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 25A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V.

Weitere Produktangebote TK25S06N1L,LQ nach Preis ab 0.6 EUR bis 2.31 EUR

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TK25S06N1L,LQ TK25S06N1L,LQ Hersteller : Toshiba TK25S06N1L_datasheet_en_20200624-1649663.pdf MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK+ PD=57W F=1MHZ
auf Bestellung 25934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.16 EUR
10+1.37 EUR
100+0.97 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.63 EUR
4000+0.6 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK25S06N1L,LQ TK25S06N1L,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=29750&prodName=TK25S06N1L Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
auf Bestellung 3058 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.31 EUR
13+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH