TK28A65W,S5X

TK28A65W,S5X Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 27.6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 100 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.71 EUR
50+ 6.1 EUR
100+ 5.23 EUR
Mindestbestellmenge: 3
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Technische Details TK28A65W,S5X Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 27.6A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.6mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V.

Weitere Produktangebote TK28A65W,S5X nach Preis ab 3.84 EUR bis 7.88 EUR

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TK28A65W,S5X TK28A65W,S5X Hersteller : Toshiba TK28A65W_datasheet_en_20150223-1916330.pdf MOSFET Power MOSFET N-Channel
auf Bestellung 100 Stücke:
Lieferzeit 57-61 Tag (e)
Anzahl Preis ohne MwSt
1+7.88 EUR
10+ 7.18 EUR
50+ 6.25 EUR
100+ 5.37 EUR
250+ 5.07 EUR
500+ 4.77 EUR
1000+ 3.84 EUR