| Anzahl | Preis |
|---|---|
| 1+ | 8.57 EUR |
| 10+ | 4.51 EUR |
| 100+ | 4.49 EUR |
| 500+ | 3.91 EUR |
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Technische Details TK28A65W,S5X Toshiba
Description: MOSFET N-CH 650V 27.6A TO220SIS, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.5V @ 1.6mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TK28A65W,S5X nach Preis ab 4.57 EUR bis 9.45 EUR
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TK28A65W,S5X | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 27.6A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK28A65W,S5X |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 27.6A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V 27.6A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.45 EUR |
| 50+ | 5 EUR |
| 100+ | 4.57 EUR |