auf Bestellung 60 Stücke:
Lieferzeit 190-194 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.65 EUR |
| 10+ | 10.49 EUR |
| 30+ | 6.2 EUR |
| 60+ | 6.16 EUR |
| 120+ | 5.35 EUR |
| 510+ | 4.88 EUR |
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Technische Details TK28N65W,S1F Toshiba
Description: MOSFET N-CH 650V 27.6A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.6mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V.
Weitere Produktangebote TK28N65W,S1F nach Preis ab 7.05 EUR bis 12.13 EUR
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TK28N65W,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 27.6A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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TK28N65W,S1F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 650V 27.6A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |