auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.51 EUR |
| 10+ | 7.3 EUR |
| 120+ | 6.16 EUR |
| 510+ | 5.88 EUR |
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Technische Details TK28N65W5,S1F Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.6mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V.
Weitere Produktangebote TK28N65W5,S1F nach Preis ab 7.44 EUR bis 12.74 EUR
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TK28N65W5,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.6mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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TK28N65W5,S1F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 650V 27.6A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |