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| Anzahl | Preis |
|---|---|
| 2+ | 2.69 EUR |
| 10+ | 2.24 EUR |
| 50+ | 1.21 EUR |
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Technische Details TK290A60Y,S4X Toshiba
Description: MOSFET N-CH 600V 11.5A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 450µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V.
Weitere Produktangebote TK290A60Y,S4X
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK290A60Y,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 11.5A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V |
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