| Anzahl | Preis |
|---|---|
| 2+ | 1.47 EUR |
| 10+ | 1.02 EUR |
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Technische Details TK2K2A60F,S4X Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 350µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK2K2A60F,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: X35 PB-F POWER MOSFET TRANSISTORInput Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4V @ 350µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
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