TK2P60D(TE16L1,NV) Toshiba
auf Bestellung 1824 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 252+ | 0.59 EUR |
| 271+ | 0.53 EUR |
| 272+ | 0.51 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
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Technische Details TK2P60D(TE16L1,NV) Toshiba
Description: MOSFET N-CH 600V 2A PW-MOLD, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 1mA, Supplier Device Package: PW-MOLD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V.
Weitere Produktangebote TK2P60D(TE16L1,NV)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| TK2P60D(TE16L1,NV) | Hersteller : Toshiba |
 Field Effect Transistor Silicon N Channel MOS Type |
Produkt ist nicht verfügbar |
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| TK2P60D(TE16L1,NV) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 2A PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: PW-MOLD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
Produkt ist nicht verfügbar |