TK2Q60D(Q) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 600V 2A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.48 EUR |
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Technische Details TK2Q60D(Q) Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD2, Packaging: Bulk, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 1mA, Supplier Device Package: PW-MOLD2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V.
Weitere Produktangebote TK2Q60D(Q) nach Preis ab 0.8 EUR bis 2.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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TK2Q60D(Q) | Hersteller : Toshiba | MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm |
auf Bestellung 487 Stücke: Lieferzeit 14-28 Tag (e) |
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TK2Q60D(Q) |
auf Bestellung 5500 Stücke: Lieferzeit 21-28 Tag (e) |
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TK2Q60D(Q) | Hersteller : Toshiba | Trans MOSFET N-CH Si 600V 2A 3-Pin(3+Tab) PW-Mold2 |
Produkt ist nicht verfügbar |