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Technische Details TK2R4A08QM,S4X Toshiba
Description: UMOS10 TO-220SIS 80V 2.4MOHM, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.5V @ 2.2mA, Power Dissipation (Max): 47W (Tc), Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TK2R4A08QM,S4X nach Preis ab 3.2 EUR bis 6.3 EUR
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TK2R4A08QM,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: UMOS10 TO-220SIS 80V 2.4MOHMInput Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.5V @ 2.2mA Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 78 Stücke: Lieferzeit 10-14 Tag (e) |
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