auf Bestellung 149 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.05 EUR |
| 10+ | 3.73 EUR |
| 50+ | 3.17 EUR |
| 100+ | 2.89 EUR |
| 250+ | 2.59 EUR |
| 500+ | 2.45 EUR |
| 1000+ | 2.2 EUR |
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Technische Details TK2R4A08QM,S4X Toshiba
Description: UMOS10 TO-220SIS 80V 2.4MOHM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 2.2mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V.
Weitere Produktangebote TK2R4A08QM,S4X nach Preis ab 3.86 EUR bis 4.61 EUR
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TK2R4A08QM,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: UMOS10 TO-220SIS 80V 2.4MOHMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.2mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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