TK2R4A08QM,S4X Toshiba
| Anzahl | Privatkunde |
|---|---|
| 85+ | 2.11 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
85 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details TK2R4A08QM,S4X Toshiba
Description: UMOS10 TO-220SIS 80V 2.4MOHM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 2.2mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V.
Weitere Produktangebote TK2R4A08QM,S4X nach Preis ab 2.11 EUR bis 7.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
TK2R4A08QM,S4X | Toshiba |
 Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
 |
TK2R4A08QM,S4X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220SIS 80V 2.4MOHM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.2mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
auf Bestellung 78 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TK2R4A08QM,S4X |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 2.11 EUR |
| TK2R4A08QM,S4X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 2.4MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Description: UMOS10 TO-220SIS 80V 2.4MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.5 EUR |
| 50+ | 3.81 EUR |