Technische Details TK2R4A08QM,S4X Toshiba
Description: UMOS10 TO-220SIS 80V 2.4MOHM, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.5V @ 2.2mA, Power Dissipation (Max): 47W (Tc), Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TK2R4A08QM,S4X nach Preis ab 2.06 EUR bis 7.5 EUR
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TK2R4A08QM,S4X | Toshiba |
 Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
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TK2R4A08QM,S4X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220SIS 80V 2.4MOHM Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.5V @ 2.2mA Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 78 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK2R4A08QM,S4X |
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Hersteller: Toshiba
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 2.06 EUR |
| TK2R4A08QM,S4X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 2.4MOHM
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: UMOS10 TO-220SIS 80V 2.4MOHM
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.5 EUR |
| 50+ | 3.81 EUR |