| Anzahl | Preis |
|---|---|
| 2+ | 2.18 EUR |
| 10+ | 1.09 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.71 EUR |
| 5000+ | 0.67 EUR |
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Technische Details TK30E06N1,S1X Toshiba
Description: MOSFET N-CH 60V 43A TO220, Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 200µA, Power Dissipation (Max): 53W (Tc).
Weitere Produktangebote TK30E06N1,S1X nach Preis ab 1.34 EUR bis 2.25 EUR
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TK30E06N1,S1X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 43A TO220Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 43A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 53W (Tc) |
auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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