| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.59 EUR |
| 10+ | 1.3 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.84 EUR |
| 5000+ | 0.8 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK30E06N1,S1X Toshiba
Description: MOSFET N-CH 60V 43A TO220, Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 200µA, Power Dissipation (Max): 53W (Tc).
Weitere Produktangebote TK30E06N1,S1X nach Preis ab 1.59 EUR bis 2.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
TK30E06N1,S1X | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 43A TO220Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 43A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 53W (Tc) |
auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TK30E06N1,S1X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 43A TO220
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 53W (Tc)
Description: MOSFET N-CH 60V 43A TO220
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 53W (Tc)
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.68 EUR |
| 50+ | 1.59 EUR |