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TK30S06K3L(T6L1,NQ

TK30S06K3L(T6L1,NQ Toshiba


TK30S06K3L_datasheet_en_20140804-1151067.pdf Hersteller: Toshiba
MOSFET N-Ch MOS 30A 60V 30W 1350pF 0.018
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
18+2.94 EUR
22+ 2.42 EUR
100+ 1.9 EUR
500+ 1.61 EUR
1000+ 1.31 EUR
2000+ 1.23 EUR
4000+ 1.17 EUR
Mindestbestellmenge: 18
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Technische Details TK30S06K3L(T6L1,NQ Toshiba

Description: MOSFET N-CH 60V 30A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 18Ohm @ 15A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V.

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TK30S06K3L(T6L1,NQ TK30S06K3L(T6L1,NQ Hersteller : Toshiba tk30s06k3l_datasheet_en_20140804.pdf Trans MOSFET N-CH Si 60V 30A Automotive 3-Pin(2+Tab) DPAK+ T/R
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TK30S06K3L(T6L1,NQ TK30S06K3L(T6L1,NQ Hersteller : Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Produkt ist nicht verfügbar