auf Bestellung 50 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 21.58 EUR |
| 10+ | 18.49 EUR |
| 30+ | 16.77 EUR |
| 120+ | 15.42 EUR |
| 270+ | 14.51 EUR |
| 510+ | 13.62 EUR |
| 1020+ | 12.25 EUR |
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Technische Details TK31N60W,S1VF Toshiba
Description: MOSFET N CH 600V 30.8A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 1.5mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V.
Weitere Produktangebote TK31N60W,S1VF
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TK31N60W,S1VF Produktcode: 129935 |
 Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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TK31N60W,S1VF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 30.8A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
Produkt ist nicht verfügbar |