TK31V60W,LVQ Toshiba
Hersteller: Toshiba
TK31V60W,LVQ Toshiba MOSFETs Transistor N-CH Si 600V 30.8A 5-Pin DFN EP T/R Si - Arrow.com
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Technische Details TK31V60W,LVQ Toshiba
Description: MOSFET N-CH 600V 30.8A 4DFN, Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-DFN-EP (8x8), Vgs(th) (Max) @ Id: 3.7V @ 1.5mA, Power Dissipation (Max): 240W (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Weitere Produktangebote TK31V60W,LVQ nach Preis ab 6.59 EUR bis 19.15 EUR
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TK31V60W,LVQ | Toshiba |
TK31V60W,LVQ Toshiba MOSFETs Transistor N-CH Si 600V 30.8A 5-Pin DFN EP T/R Si - Arrow.com |
auf Bestellung 1033 Stücke: Lieferzeit 14-21 Tag (e) |
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TK31V60W,LVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 30.8A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
auf Bestellung 2455 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Toshiba
TK31V60W,LVQ Toshiba MOSFETs Transistor N-CH Si 600V 30.8A 5-Pin DFN EP T/R Si - Arrow.com
TK31V60W,LVQ Toshiba MOSFETs Transistor N-CH Si 600V 30.8A 5-Pin DFN EP T/R Si - Arrow.com
auf Bestellung 1033 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 6.59 EUR |
| TK31V60W,LVQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.15 EUR |
| 10+ | 13.16 EUR |
| 100+ | 9.79 EUR |
| 500+ | 9.04 EUR |