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TK31V60W,LVQ

TK31V60W,LVQ Toshiba

1545docget.jsplangenpidtk31v60wtypedatasheet.jsplangenpidtk31v60wtype.pdf Hersteller: Toshiba
TK31V60W,LVQ Toshiba MOSFETs Transistor N-CH Si 600V 30.8A 5-Pin DFN EP T/R Si - Arrow.com
auf Bestellung 1033 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
21+7.48 EUR
22+ 6.88 EUR
100+ 6.22 EUR
500+ 5.69 EUR
1000+ 5.22 EUR
Mindestbestellmenge: 21
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Technische Details TK31V60W,LVQ Toshiba

Description: MOSFET N-CH 600V 30.8A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 1.5mA, Supplier Device Package: 4-DFN-EP (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V.

Weitere Produktangebote TK31V60W,LVQ nach Preis ab 7.48 EUR bis 14.19 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TK31V60W,LVQ TK31V60W,LVQ Hersteller : Toshiba 1545docget.jsplangenpidtk31v60wtypedatasheet.jsplangenpidtk31v60wtype.pdf TK31V60W,LVQ Toshiba MOSFETs Transistor N-CH Si 600V 30.8A 5-Pin DFN EP T/R Si - Arrow.com
auf Bestellung 1033 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
21+7.48 EUR
Mindestbestellmenge: 21
TK31V60W,LVQ TK31V60W,LVQ Hersteller : Toshiba Semiconductor and Storage TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.19 EUR
100+ 12.66 EUR
500+ 11.17 EUR
1000+ 10.05 EUR
Mindestbestellmenge: 2
TK31V60W,LVQ TK31V60W,LVQ Hersteller : Toshiba 1545docget.jsplangenpidtk31v60wtypedatasheet.jsplangenpidtk31v60wtype.pdf TK31V60W,LVQ Toshiba MOSFETs Transistor N-CH Si 600V 30.8A 5-Pin DFN EP T/R Si - Arrow.com
Produkt ist nicht verfügbar
TK31V60W,LVQ TK31V60W,LVQ Hersteller : Toshiba 1545docget.jsplangenpidtk31v60wtypedatasheet.jsplangenpidtk31v60wtype.pdf TK31V60W,LVQ Toshiba MOSFETs Transistor N-CH Si 600V 30.8A 5-Pin DFN EP T/R Si - Arrow.com
Produkt ist nicht verfügbar
TK31V60W,LVQ TK31V60W,LVQ Hersteller : Toshiba Semiconductor and Storage TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
TK31V60W,LVQ TK31V60W,LVQ Hersteller : Toshiba TK31V60W_datasheet_en_20140225-1915987.pdf MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A
Produkt ist nicht verfügbar