Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TK31V60W,LVQ
TK31V60W,LVQ

TK31V60W,LVQ Toshiba Semiconductor and Storage

TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+16.09 EUR
10+11.06 EUR
100+8.23 EUR
500+7.6 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TK31V60W,LVQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 30.8A 4DFN, Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-DFN-EP (8x8), Vgs(th) (Max) @ Id: 3.7V @ 1.5mA, Power Dissipation (Max): 240W (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).

Weitere Produktangebote TK31V60W,LVQ

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TK31V60W,LVQ TK31V60W,LVQ Toshiba Semiconductor and Storage TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W Description: MOSFET N-CH 600V 30.8A 4DFN
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK31V60W,LVQ TK31V60W,LVQ Toshiba TK31V60W_datasheet_en_20140225-1915987.pdf MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK31V60W,LVQ TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W
TK31V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK31V60W,LVQ TK31V60W_datasheet_en_20140225-1915987.pdf
TK31V60W,LVQ
Hersteller: Toshiba
MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH