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TK31V60W5,LVQ

TK31V60W5,LVQ Toshiba Semiconductor and Storage

TK31V60W5_datasheet_en_20160830.pdf?did=28827&prodName=TK31V60W5 Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.72 EUR
100+ 5.71 EUR
500+ 5.08 EUR
1000+ 4.35 EUR
Mindestbestellmenge: 3
Produktrezensionen
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Technische Details TK31V60W5,LVQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 30.8A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), Rds On (Max) @ Id, Vgs: 109mOhm @ 15.4A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: 4-DFN-EP (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V.

Weitere Produktangebote TK31V60W5,LVQ nach Preis ab 5.17 EUR bis 9.98 EUR

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TK31V60W5,LVQ TK31V60W5,LVQ Hersteller : Toshiba TK31V60W5_datasheet_en_20160830-1022997.pdf MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A
auf Bestellung 15113 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.98 EUR
10+ 8.4 EUR
25+ 7.9 EUR
100+ 6.79 EUR
250+ 6.4 EUR
500+ 6.03 EUR
1000+ 5.17 EUR
Mindestbestellmenge: 6
TK31V60W5,LVQ TK31V60W5,LVQ Hersteller : Toshiba 126862616083375126862323122019tk31v60w5_datasheet_en_20160830.pdf.pdf Trans MOSFET N-CH Si 600V 30.8A 5-Pin DFN EP T/R
Produkt ist nicht verfügbar
TK31V60W5,LVQ TK31V60W5,LVQ Hersteller : Toshiba Semiconductor and Storage TK31V60W5_datasheet_en_20160830.pdf?did=28827&prodName=TK31V60W5 Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar