TK31V60W5,LVQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 109mOhm @ 15.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 3.24 EUR |
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Technische Details TK31V60W5,LVQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-DFN-EP (8x8), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Power Dissipation (Max): 240W (Tc), Rds On (Max) @ Id, Vgs: 109mOhm @ 15.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TA), Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK31V60W5,LVQ nach Preis ab 3.24 EUR bis 8.47 EUR
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TK31V60W5,LVQ | Hersteller : Toshiba |
MOSFETs N-Ch DTMOSIV 600V 240W 3000pF 30.8A |
auf Bestellung 4852 Stücke: Lieferzeit 10-14 Tag (e) |
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TK31V60W5,LVQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 30.8A 4DFN Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 4-DFN-EP (8x8) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 109mOhm @ 15.4A, 10V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TA) |
auf Bestellung 5450 Stücke: Lieferzeit 10-14 Tag (e) |
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