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TK31V60X,LQ

TK31V60X,LQ Toshiba Semiconductor and Storage

TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+4.06 EUR
Mindestbestellmenge: 2500
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Technische Details TK31V60X,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 30.8A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.5mA, Supplier Device Package: 4-DFN-EP (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V.

Weitere Produktangebote TK31V60X,LQ nach Preis ab 5.39 EUR bis 12.4 EUR

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TK31V60X,LQ TK31V60X,LQ Hersteller : Toshiba Semiconductor and Storage TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 23857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.34 EUR
100+ 7.08 EUR
500+ 6.29 EUR
1000+ 5.39 EUR
Mindestbestellmenge: 3
TK31V60X,LQ TK31V60X,LQ Hersteller : Toshiba TK31V60X_datasheet_en_20140228-1916286.pdf MOSFET DTMOSIV-High Speed 600V 88mVGS=10V)
auf Bestellung 2214 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+12.4 EUR
10+ 10.43 EUR
25+ 10.4 EUR
100+ 8.45 EUR
250+ 8.42 EUR
500+ 7.49 EUR
1000+ 6.4 EUR
Mindestbestellmenge: 5