auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.95 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.88 EUR |
| 2500+ | 0.86 EUR |
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Technische Details TK32A12N1,S4X Toshiba
Description: MOSFET N-CH 120V 32A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V.
Weitere Produktangebote TK32A12N1,S4X nach Preis ab 1.52 EUR bis 3.15 EUR
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TK32A12N1,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 120V 32A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V |
auf Bestellung 66 Stücke: Lieferzeit 10-14 Tag (e) |
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