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TK33S10N1L,LXHQ

TK33S10N1L,LXHQ Toshiba Semiconductor and Storage

TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.04 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK33S10N1L,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 33A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V.

Weitere Produktangebote TK33S10N1L,LXHQ nach Preis ab 0.99 EUR bis 3.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TK33S10N1L,LXHQ TK33S10N1L,LXHQ Toshiba 16AEAB310B8468176F2ADF2A02FB01E63A544153B6260A7684754056C7C2FC34.pdf MOSFETs PD=40W F=1MHZ AEC-Q101
auf Bestellung 3239 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.76 EUR
10+1.93 EUR
100+1.44 EUR
500+1.13 EUR
1000+1.05 EUR
2000+0.99 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK33S10N1L,LXHQ TK33S10N1L,LXHQ Toshiba Semiconductor and Storage TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 3536 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.58 EUR
10+2.28 EUR
100+1.54 EUR
500+1.21 EUR
1000+1.12 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK33S10N1L,LXHQ 16AEAB310B8468176F2ADF2A02FB01E63A544153B6260A7684754056C7C2FC34.pdf
TK33S10N1L,LXHQ
Hersteller: Toshiba
MOSFETs PD=40W F=1MHZ AEC-Q101
auf Bestellung 3239 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.76 EUR
10+1.93 EUR
100+1.44 EUR
500+1.13 EUR
1000+1.05 EUR
2000+0.99 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK33S10N1L,LXHQ TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L
TK33S10N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 3536 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.58 EUR
10+2.28 EUR
100+1.54 EUR
500+1.21 EUR
1000+1.12 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH