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TK33S10N1Z,LQ

TK33S10N1Z,LQ Toshiba

tk33s10n1z_datasheet_en_20200624.pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 100V 33A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
auf Bestellung 7950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
117+1.34 EUR
126+ 1.2 EUR
127+ 1.15 EUR
140+ 1 EUR
250+ 0.95 EUR
500+ 0.87 EUR
1000+ 0.83 EUR
Mindestbestellmenge: 117
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Technische Details TK33S10N1Z,LQ Toshiba

Description: MOSFET N-CH 100V 33A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V.

Weitere Produktangebote TK33S10N1Z,LQ nach Preis ab 0.83 EUR bis 2.83 EUR

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Preis ohne MwSt
TK33S10N1Z,LQ TK33S10N1Z,LQ Hersteller : Toshiba tk33s10n1z_datasheet_en_20200624.pdf Trans MOSFET N-CH Si 100V 33A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
auf Bestellung 7950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
117+1.34 EUR
126+ 1.2 EUR
127+ 1.15 EUR
140+ 1 EUR
250+ 0.95 EUR
500+ 0.87 EUR
1000+ 0.83 EUR
Mindestbestellmenge: 117
TK33S10N1Z,LQ TK33S10N1Z,LQ Hersteller : Toshiba Semiconductor and Storage TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 1873 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.43 EUR
10+ 2.02 EUR
100+ 1.6 EUR
500+ 1.36 EUR
1000+ 1.15 EUR
Mindestbestellmenge: 8
TK33S10N1Z,LQ TK33S10N1Z,LQ Hersteller : Toshiba TK33S10N1Z_datasheet_en_20200624-1150677.pdf MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK
auf Bestellung 1993 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.83 EUR
22+ 2.47 EUR
100+ 2.08 EUR
250+ 2.06 EUR
500+ 1.84 EUR
1000+ 1.69 EUR
2000+ 1.62 EUR
Mindestbestellmenge: 19
TK33S10N1Z,LQ TK33S10N1Z,LQ Hersteller : Toshiba tk33s10n1z_datasheet_en_20200624.pdf Trans MOSFET N-CH Si 100V 33A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar
TK33S10N1Z,LQ TK33S10N1Z,LQ Hersteller : Toshiba Semiconductor and Storage TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
Produkt ist nicht verfügbar