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TK35N65W5,S1F

TK35N65W5,S1F Toshiba

TK35N65W5_datasheet_en_20140225-1916316.pdf Hersteller: Toshiba
MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS
auf Bestellung 29 Stücke:
Lieferzeit 171-185 Tag (e)
Anzahl Preis ohne MwSt
3+19.86 EUR
10+ 17.55 EUR
120+ 14.79 EUR
270+ 14.38 EUR
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Technische Details TK35N65W5,S1F Toshiba

Description: MOSFET N-CH 650V 35A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 17.5A, 10V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.1mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V.

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TK35N65W5,S1F TK35N65W5,S1F Hersteller : Toshiba 1619docget.jsplangenpidtk35n65w5typedatasheet.jsplangenpidtk35n65w5ty.pdf Trans MOSFET N-CH Si 650V 35A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
TK35N65W5,S1F TK35N65W5,S1F Hersteller : Toshiba 1619docget.jsplangenpidtk35n65w5typedatasheet.jsplangenpidtk35n65w5ty.pdf Trans MOSFET N-CH Si 650V 35A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
TK35N65W5,S1F TK35N65W5,S1F Hersteller : Toshiba 1619docget.jsplangenpidtk35n65w5typedatasheet.jsplangenpidtk35n65w5ty.pdf Trans MOSFET N-CH Si 650V 35A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
TK35N65W5,S1F TK35N65W5,S1F Hersteller : Toshiba Semiconductor and Storage TK35N65W5_datasheet_en_20140225.pdf?did=14535&prodName=TK35N65W5 Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 17.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Produkt ist nicht verfügbar