TK380P60Y,RQ

TK380P60Y,RQ Toshiba Semiconductor and Storage


TK380P60Y_datasheet_en_20161115.pdf?did=55882&prodName=TK380P60Y Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.07 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TK380P60Y,RQ Toshiba Semiconductor and Storage

Description: MOSFET N-CHANNEL 600V 9.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 360µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V.

Weitere Produktangebote TK380P60Y,RQ nach Preis ab 1.06 EUR bis 3.63 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TK380P60Y,RQ TK380P60Y,RQ Hersteller : Toshiba TK380P60Y_datasheet_en_20161115-1115891.pdf MOSFETs N-Ch DTMOSV 600V 80W 590pF 9.7A
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.92 EUR
10+1.99 EUR
100+1.4 EUR
500+1.15 EUR
1000+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK380P60Y,RQ TK380P60Y,RQ Hersteller : Toshiba Semiconductor and Storage TK380P60Y_datasheet_en_20161115.pdf?did=55882&prodName=TK380P60Y Description: MOSFET N-CHANNEL 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH