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TK380P65Y,RQ

TK380P65Y,RQ Toshiba

13209docget.jspdid55884prodnametk380p65y.jspdid55884prodnametk380p65y..pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 9.7A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
213+0.74 EUR
Mindestbestellmenge: 213
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Technische Details TK380P65Y,RQ Toshiba

Description: MOSFET N-CHANNEL 650V 9.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4V @ 360µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V.

Weitere Produktangebote TK380P65Y,RQ nach Preis ab 0.74 EUR bis 4 EUR

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TK380P65Y,RQ TK380P65Y,RQ Hersteller : Toshiba 13209docget.jspdid55884prodnametk380p65y.jspdid55884prodnametk380p65y..pdf Trans MOSFET N-CH Si 650V 9.7A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
213+0.74 EUR
Mindestbestellmenge: 213
TK380P65Y,RQ TK380P65Y,RQ Hersteller : Toshiba Semiconductor and Storage TK380P65Y_datasheet_en_20161115.pdf?did=55884&prodName=TK380P65Y Description: MOSFET N-CHANNEL 650V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.68 EUR
10+ 2.22 EUR
100+ 1.76 EUR
500+ 1.49 EUR
1000+ 1.27 EUR
Mindestbestellmenge: 7
TK380P65Y,RQ TK380P65Y,RQ Hersteller : Toshiba TK380P65Y_datasheet_en_20161115-1115901.pdf MOSFET N-Ch DTMOSV 650V 80W 590pF 9.7A
auf Bestellung 41 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4 EUR
18+ 3.02 EUR
100+ 2.44 EUR
250+ 2.34 EUR
500+ 2.22 EUR
1000+ 1.91 EUR
2000+ 1.81 EUR
Mindestbestellmenge: 13
TK380P65Y,RQ TK380P65Y,RQ Hersteller : Toshiba 13209docget.jspdid55884prodnametk380p65y.jspdid55884prodnametk380p65y..pdf Trans MOSFET N-CH Si 650V 9.7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TK380P65Y,RQ TK380P65Y,RQ Hersteller : Toshiba Semiconductor and Storage TK380P65Y_datasheet_en_20161115.pdf?did=55884&prodName=TK380P65Y Description: MOSFET N-CHANNEL 650V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Produkt ist nicht verfügbar