| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.68 EUR |
| 10+ | 15.9 EUR |
| 100+ | 11.25 EUR |
| 500+ | 11.13 EUR |
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Technische Details TK39J60W,S1VQ Toshiba
Description: MOSFET N-CH 600V 38.8A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 1.9mA, Supplier Device Package: TO-3P(N), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V.
Weitere Produktangebote TK39J60W,S1VQ nach Preis ab 22.07 EUR bis 22.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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TK39J60W,S1VQ | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 38.8A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.9mA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK39J60W,S1VQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.07 EUR |