auf Bestellung 60 Stücke:
Lieferzeit 145-159 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 12.82 EUR |
10+ | 11.34 EUR |
30+ | 9.54 EUR |
120+ | 8.32 EUR |
270+ | 8.19 EUR |
510+ | 7.67 EUR |
1020+ | 6.21 EUR |
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Technische Details TK39N60W,S1VF Toshiba
Description: MOSFET N CH 600V 38.8A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 1.9mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V.
Weitere Produktangebote TK39N60W,S1VF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TK39N60W,S1VF | Hersteller : Toshiba | Trans MOSFET N-CH Si 600V 38.8A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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TK39N60W,S1VF | Hersteller : Toshiba | Trans MOSFET N-CH Si 600V 38.8A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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TK39N60W,S1VF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 38.8A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.9mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V |
Produkt ist nicht verfügbar |