auf Bestellung 302 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 2.86 EUR |
| 23+ | 2.34 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.24 EUR |
| 2500+ | 1.18 EUR |
| 5000+ | 1.14 EUR |
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Technische Details TK3A90E,S4X Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO-, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 4.6Ohm @ 1.3A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V.
Weitere Produktangebote TK3A90E,S4X nach Preis ab 2.83 EUR bis 2.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
| TK3A90E,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR TO-Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 4.6Ohm @ 1.3A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
auf Bestellung 47 Stücke: Lieferzeit 21-28 Tag (e) |
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