TK3P80E,RQ Toshiba
| Anzahl | Preis |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 1.54 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.94 EUR |
| 2000+ | 0.86 EUR |
| 4000+ | 0.81 EUR |
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Technische Details TK3P80E,RQ Toshiba
Description: PB-F POWER MOSFET TRANSISTOR DPA, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 300µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK3P80E,RQ nach Preis ab 1.03 EUR bis 3.01 EUR
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TK3P80E,RQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR DPAInput Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 300µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 976 Stücke: Lieferzeit 10-14 Tag (e) |
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TK3P80E,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPA Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 300µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |