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TK3P80E,RQ

TK3P80E,RQ Toshiba

E7C6F28EEE9D637954B066358637DD535C0EE66A51DC3BD5189F3E28754A60B8.pdf Hersteller: Toshiba
MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ
auf Bestellung 3632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.24 EUR
10+1.54 EUR
100+1.04 EUR
500+0.98 EUR
1000+0.94 EUR
2000+0.86 EUR
4000+0.81 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK3P80E,RQ Toshiba

Description: PB-F POWER MOSFET TRANSISTOR DPA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.

Weitere Produktangebote TK3P80E,RQ nach Preis ab 1.03 EUR bis 3.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TK3P80E,RQ TK3P80E,RQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14695&prodName=TK3P80E Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+1.91 EUR
100+1.29 EUR
500+1.03 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TK3P80E,RQ TK3P80E,RQ Hersteller : Toshiba 2257docget.jsplangenpidtk3p80etypedatasheet.jsplangenpidtk3p80etypeda.pdf Trans MOSFET N-CH Si 800V 3A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK3P80E,RQ TK3P80E,RQ Hersteller : Toshiba 2257docget.jsplangenpidtk3p80etypedatasheet.jsplangenpidtk3p80etypeda.pdf Trans MOSFET N-CH Si 800V 3A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK3P80E,RQ TK3P80E,RQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14695&prodName=TK3P80E Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH