TK3R1P04PL,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.82 EUR |
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Technische Details TK3R1P04PL,RQ Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 40V 58A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 500µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V.
Weitere Produktangebote TK3R1P04PL,RQ nach Preis ab 0.9 EUR bis 2.5 EUR
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TK3R1P04PL,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 40V 58A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V |
auf Bestellung 4257 Stücke: Lieferzeit 10-14 Tag (e) |
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TK3R1P04PL,RQ | Hersteller : Toshiba |
MOSFETs N-Ch 40V 4670pF 60nC 130A 87W |
auf Bestellung 7575 Stücke: Lieferzeit 10-14 Tag (e) |
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