TK3R1P04PL,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.01 EUR |
| 7500+ | 0.9 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details TK3R1P04PL,RQ Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 40V 58A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 500µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V.
Weitere Produktangebote TK3R1P04PL,RQ nach Preis ab 1.24 EUR bis 3.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK3R1P04PL,RQ | Toshiba |
MOSFETs N-Ch 40V 4670pF 60nC 130A 87W |
auf Bestellung 2370 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
TK3R1P04PL,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 40V 58A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V |
auf Bestellung 22453 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TK3R1P04PL,RQ |
|
Hersteller: Toshiba
MOSFETs N-Ch 40V 4670pF 60nC 130A 87W
MOSFETs N-Ch 40V 4670pF 60nC 130A 87W
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.61 EUR |
| 10+ | 1.71 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.33 EUR |
| TK3R1P04PL,RQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
Description: MOSFET N-CHANNEL 40V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
auf Bestellung 22453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.69 EUR |
| 10+ | 2.33 EUR |
| 50+ | 1.75 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.24 EUR |