auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.77 EUR |
| 10+ | 3.73 EUR |
| 25+ | 3.41 EUR |
| 50+ | 3.19 EUR |
| 100+ | 2.64 EUR |
| 250+ | 2.43 EUR |
| 500+ | 2.15 EUR |
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Technische Details TK3R2A10PL,S4X Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V.
Weitere Produktangebote TK3R2A10PL,S4X
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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TK3R2A10PL,S4X | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |
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TK3R2A10PL,S4X | Hersteller : Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V |
Produkt ist nicht verfügbar |