TK40E10N1,S1X Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.69 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6 Stücke
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Technische Details TK40E10N1,S1X Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 90A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V, Power Dissipation (Max): 126W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V.
Weitere Produktangebote TK40E10N1,S1X nach Preis ab 1.76 EUR bis 5.9 EUR
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TK40E10N1,S1X | Toshiba |
MOSFETs 40V N0Ch PWR FET 90A 126W 3000pF |
auf Bestellung 159 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK40E10N1,S1X |
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Hersteller: Toshiba
MOSFETs 40V N0Ch PWR FET 90A 126W 3000pF
MOSFETs 40V N0Ch PWR FET 90A 126W 3000pF
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.9 EUR |
| 10+ | 3.53 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 1.83 EUR |
| 5000+ | 1.76 EUR |