TK40E10N1,S1X Toshiba Semiconductor and Storage

Description: MOSFET N CH 100V 90A TO220, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 500µA, Power Dissipation (Max): 126W (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.