auf Bestellung 1979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.99 EUR |
| 100+ | 0.69 EUR |
| 250+ | 0.68 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.50 EUR |
| 2000+ | 0.42 EUR |
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Technische Details TK40P03M1(T6RSS-Q) Toshiba
Description: MOSFET N-CH 30V 40A DP, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V.
Weitere Produktangebote TK40P03M1(T6RSS-Q)
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK40P03M1(T6RSS-Q) | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 30V 40A DPPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V |
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