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TK40P03M1(T6RSS-Q)

TK40P03M1(T6RSS-Q) Toshiba

TK40P03M1_datasheet_en_20160217.pdf?did=1366&prodName=TK40P03M1
Hersteller: Toshiba
MOSFETs N-ch 30V 40A DP
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.39 EUR
10+1.48 EUR
100+0.96 EUR
500+0.76 EUR
1000+0.68 EUR
2000+0.57 EUR
4000+0.52 EUR
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Technische Details TK40P03M1(T6RSS-Q) Toshiba

Description: MOSFET N-CH 30V 40A DP, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2.3V @ 100µA, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta).

Weitere Produktangebote TK40P03M1(T6RSS-Q)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TK40P03M1(T6RSS-Q) TK40P03M1(T6RSS-Q) Toshiba Semiconductor and Storage TK40P03M1_datasheet_en_20160217.pdf?did=1366&prodName=TK40P03M1 Description: MOSFET N-CH 30V 40A DP
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.3V @ 100µA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK40P03M1(T6RSS-Q) TK40P03M1_datasheet_en_20160217.pdf?did=1366&prodName=TK40P03M1
TK40P03M1(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A DP
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.3V @ 100µA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH