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TK40S06N1L,LQ

TK40S06N1L,LQ Toshiba Semiconductor and Storage

datasheet_en_20200624.pdf?did=30110 Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.62 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK40S06N1L,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 40A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V, Power Dissipation (Max): 88.2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V.

Weitere Produktangebote TK40S06N1L,LQ nach Preis ab 0.59 EUR bis 2.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TK40S06N1L,LQ TK40S06N1L,LQ Hersteller : Toshiba TK40S06N1L_datasheet_en_20200624-1649704.pdf MOSFETs TO252 N CHAN 60V
auf Bestellung 13218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.64 EUR
10+1.23 EUR
100+0.86 EUR
250+0.85 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK40S06N1L,LQ TK40S06N1L,LQ Hersteller : Toshiba Semiconductor and Storage datasheet_en_20200624.pdf?did=30110 Description: MOSFET N-CH 60V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 2618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
13+1.43 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TK40S06N1L,LQ TK40S06N1L,LQ Hersteller : Toshiba tk40s06n1l_datasheet_en_20200624.pdf Trans MOSFET N-CH Si 60V 40A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK40S06N1L,LQ TK40S06N1L,LQ Hersteller : Toshiba tk40s06n1l_datasheet_en_20200624.pdf Trans MOSFET N-CH Si 60V 40A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH