TK40S06N1L,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
| Anzahl | Preis |
|---|---|
| 2000+ | 0.54 EUR |
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Technische Details TK40S06N1L,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 2.5V @ 200µA, Power Dissipation (Max): 88.2W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V.
Weitere Produktangebote TK40S06N1L,LQ nach Preis ab 0.62 EUR bis 1.55 EUR
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TK40S06N1L,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 40A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2565 Stücke: Lieferzeit 10-14 Tag (e) |
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TK40S06N1L,LQ | Hersteller : Toshiba |
MOSFETs TO252 N-CH 60V 40A |
Produkt ist nicht verfügbar |