auf Bestellung 1666 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
25+ | 2.1 EUR |
30+ | 1.74 EUR |
100+ | 1.35 EUR |
500+ | 1.15 EUR |
1000+ | 0.95 EUR |
2000+ | 0.88 EUR |
4000+ | 0.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK40S06N1L,LQ Toshiba
Description: MOSFET N-CH 60V 40A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V, Power Dissipation (Max): 88.2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V.
Weitere Produktangebote TK40S06N1L,LQ nach Preis ab 1.13 EUR bis 2.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TK40S06N1L,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 40A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V |
auf Bestellung 700 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
TK40S06N1L,LQ | Hersteller : Toshiba | Trans MOSFET N-CH Si 60V 40A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
Produkt ist nicht verfügbar |
||||||||||||
TK40S06N1L,LQ | Hersteller : Toshiba | Trans MOSFET N-CH Si 60V 40A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
Produkt ist nicht verfügbar |
||||||||||||
TK40S06N1L,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 40A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V |
Produkt ist nicht verfügbar |