TK42A12N1,S4X Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 120V 42A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V
Description: MOSFET N-CH 120V 42A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.32 EUR |
50+ | 1.87 EUR |
100+ | 1.48 EUR |
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Technische Details TK42A12N1,S4X Toshiba Semiconductor and Storage
Description: MOSFET N-CH 120V 42A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V.
Weitere Produktangebote TK42A12N1,S4X nach Preis ab 1.35 EUR bis 3.46 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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TK42A12N1,S4X | Hersteller : Toshiba | MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V |
auf Bestellung 201 Stücke: Lieferzeit 14-28 Tag (e) |
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TK42A12N1,S4X | Hersteller : Toshiba | Trans MOSFET N-CH Si 120V 88A 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
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TK42A12N1,S4X | Hersteller : Toshiba | Trans MOSFET N-CH Si 120V 88A 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |