
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 2.34 EUR |
10+ | 1.94 EUR |
100+ | 1.49 EUR |
500+ | 1.27 EUR |
1000+ | 0.97 EUR |
5000+ | 0.92 EUR |
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Technische Details TK42A12N1,S4X Toshiba
Description: MOSFET N-CH 120V 42A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V.
Weitere Produktangebote TK42A12N1,S4X nach Preis ab 1.71 EUR bis 3.89 EUR
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TK42A12N1,S4X | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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TK42A12N1,S4X | Hersteller : Toshiba |
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TK42A12N1,S4X | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |