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Technische Details TK49N65W Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 49.2A, Power dissipation: 400W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 55mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 160nC.
Weitere Produktangebote TK49N65W
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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TK49N65W,S1F(S | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 49.2A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 160nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TK49N65W,S1F(S |
|
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49.2A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 160nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49.2A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 160nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH