auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 1.41 EUR |
| 50+ | 1.2 EUR |
| 100+ | 1.07 EUR |
| 250+ | 0.97 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.75 EUR |
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Technische Details TK4A60D(STA4,Q,M) Toshiba
Description: MOSFET N-CH 600V 4A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.
Weitere Produktangebote TK4A60D(STA4,Q,M)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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TK4A60D(STA4,Q,M) | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 600V 4A 3-Pin(3+Tab) TO-220SIS |
Produkt ist nicht verfügbar |
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TK4A60D(STA4,Q,M) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 4A 3-Pin(3+Tab) TO-220SIS |
Produkt ist nicht verfügbar |
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TK4A60D(STA4,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 4A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
Produkt ist nicht verfügbar |