TK4A60DA(STA4,Q,M) TOSHIBA
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 35W; SC67
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SC67
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 2.2Ω
Drain current: 3.5A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 35W; SC67
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SC67
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 2.2Ω
Drain current: 3.5A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 519 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 101+ | 0.71 EUR |
| 114+ | 0.63 EUR |
| 115+ | 0.62 EUR |
| 125+ | 0.57 EUR |
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Produktbewertung abgeben
Technische Details TK4A60DA(STA4,Q,M) TOSHIBA
Description: MOSFET N-CH 600V 3.5A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V, Vgs(th) (Max) @ Id: 4.4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Weitere Produktangebote TK4A60DA(STA4,Q,M) nach Preis ab 0.57 EUR bis 1.6 EUR
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TK4A60DA(STA4,Q,M) | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 35W; SC67 Kind of channel: enhancement Type of transistor: N-MOSFET Case: SC67 Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 11nC On-state resistance: 2.2Ω Drain current: 3.5A Power dissipation: 35W Gate-source voltage: ±30V Drain-source voltage: 600V |
auf Bestellung 519 Stücke: Lieferzeit 14-21 Tag (e) |
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TK4A60DA(STA4,Q,M) | Hersteller : Toshiba |
 MOSFET N-ch 600V 3.5A TO-220SIS |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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TK4A60DA(STA4,Q,M) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 3.5A 3-Pin(3+Tab) TO-220SIS |
Produkt ist nicht verfügbar |
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TK4A60DA(STA4,Q,M) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 3.5A 3-Pin(3+Tab) TO-220SIS |
Produkt ist nicht verfügbar |
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TK4A60DA(STA4,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 3.5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
Produkt ist nicht verfügbar |