TK4A60DB(STA4,Q,M)

Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.7A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube

Hersteller: Toshiba
MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm