
TK4K1A60F,S4X Toshiba Semiconductor and Storage

Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
13+ | 1.46 EUR |
14+ | 1.28 EUR |
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Technische Details TK4K1A60F,S4X Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 190µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V.
Weitere Produktangebote TK4K1A60F,S4X nach Preis ab 0.54 EUR bis 1.8 EUR
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TK4K1A60F,S4X | Hersteller : Toshiba |
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auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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TK4K1A60F,S4X | Hersteller : Toshiba |
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