auf Bestellung 464 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 1.93 EUR |
| 33+ | 1.59 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.73 EUR |
| 5000+ | 0.69 EUR |
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Technische Details TK4K1A60F,S4X Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 190µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V.
Weitere Produktangebote TK4K1A60F,S4X nach Preis ab 1.89 EUR bis 2.16 EUR
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TK4K1A60F,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V |
auf Bestellung 82 Stücke: Lieferzeit 21-28 Tag (e) |
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TK4K1A60F,S4X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 2A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |