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TK4P60D,RQ

TK4P60D,RQ Toshiba Semiconductor and Storage

docget.jsp?did=12804&prodName=TK4P60D Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DP(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.58 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK4P60D,RQ Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR DP(, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 1mA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.

Weitere Produktangebote TK4P60D,RQ nach Preis ab 0.63 EUR bis 2.01 EUR

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TK4P60D,RQ TK4P60D,RQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=12804&prodName=TK4P60D Description: PB-F POWER MOSFET TRANSISTOR DP(
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.25 EUR
100+0.83 EUR
500+0.70 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
TK4P60D,RQ TK4P60D,RQ Hersteller : Toshiba TK4P60D_datasheet_en_20140106-1649951.pdf MOSFETs Pb-F POWER MOSFET TRANSISTOR DP(OS) MOQ=2000 V=600 PD=80W F=1MHZ
auf Bestellung 1774 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.01 EUR
10+1.33 EUR
100+0.88 EUR
500+0.71 EUR
1000+0.70 EUR
2000+0.63 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK4P60D,RQ TK4P60D,RQ Hersteller : Toshiba 199tk4p60d_datasheet_en_20140106.pdf.pdf Trans MOSFET N-CH Si 600V 4A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK4P60D,RQ TK4P60D,RQ Hersteller : Toshiba 199tk4p60d_datasheet_en_20140106.pdf.pdf Trans MOSFET N-CH Si 600V 4A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH