auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.26 EUR |
| 10+ | 2.41 EUR |
| 100+ | 2.39 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.62 EUR |
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Technische Details TK4R1A10PL,S4X Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V.
Weitere Produktangebote TK4R1A10PL,S4X nach Preis ab 4.33 EUR bis 4.33 EUR
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TK4R1A10PL,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
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TK4R1A10PL,S4X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 100V 80A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |