auf Bestellung 8379 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.22 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.28 EUR |
| 2500+ | 1.21 EUR |
| 5000+ | 1.18 EUR |
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Technische Details TK4R3E06PL,S1X Toshiba
Description: MOSFET N-CH 60V 80A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V.
Weitere Produktangebote TK4R3E06PL,S1X nach Preis ab 1.85 EUR bis 3.36 EUR
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TK4R3E06PL,S1X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 80A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V |
auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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