| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.16 EUR |
| 10+ | 2.03 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.75 EUR |
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Technische Details TK4R3E06PL,S1X Toshiba
Description: MOSFET N-CH 60V 80A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V.
Weitere Produktangebote TK4R3E06PL,S1X nach Preis ab 2.71 EUR bis 4.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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TK4R3E06PL,S1X | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 80A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| TK4R3E06PL,S1X | Toshiba |
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TK4R3E06PL,S1X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Description: MOSFET N-CH 60V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 2.71 EUR |
| TK4R3E06PL,S1X |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)