auf Bestellung 1949 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.44 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.86 EUR |
| 250+ | 0.82 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |
| 2000+ | 0.53 EUR |
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Technische Details TK50P03M1(T6RSS-Q) Toshiba
Description: MOSFET N-CH 30V 50A DP, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V.
Weitere Produktangebote TK50P03M1(T6RSS-Q)
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK50P03M1(T6RSS-Q) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 50A DP Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V |
Produkt ist nicht verfügbar |
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TK50P03M1(T6RSS-Q) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 50A DP Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V |
Produkt ist nicht verfügbar |