TK55S10N1,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 100V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK55S10N1,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V.
Weitere Produktangebote TK55S10N1,LQ nach Preis ab 1.99 EUR bis 5.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TK55S10N1,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 55A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V |
auf Bestellung 3920 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TK55S10N1,LQ | Hersteller : Toshiba |
MOSFETs UMOSVIII 100V 6.5m max(VGS=10V) DPAK |
auf Bestellung 1668 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TK55S10N1,LQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 100V 55A Automotive 3-Pin(2+Tab) DPAK+ T/R |
Produkt ist nicht verfügbar |