auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.34 EUR |
| 10+ | 1.90 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 0.97 EUR |
| 5000+ | 0.94 EUR |
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Technische Details TK560A60Y,S4X Toshiba
Description: MOSFET N-CH 600V 7A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V, Power Dissipation (Max): 30W, Vgs(th) (Max) @ Id: 4V @ 240µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V.
Weitere Produktangebote TK560A60Y,S4X nach Preis ab 1.63 EUR bis 3.19 EUR
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TK560A60Y,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 7A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V Power Dissipation (Max): 30W Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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