| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.45 EUR |
| 10+ | 2.89 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.51 EUR |
| 1000+ | 2.14 EUR |
| 2500+ | 1.96 EUR |
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Technische Details TK56A12N1,S4X Toshiba
Description: MOSFET N-CH 120V 56A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 28A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 60 V.
Weitere Produktangebote TK56A12N1,S4X nach Preis ab 2.63 EUR bis 5.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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TK56A12N1,S4X | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 120V 56A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 28A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 60 V |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK56A12N1,S4X | Toshiba |
Trans MOSFET N-CH Si 120V 112A 3-Pin(3+Tab) TO-220SIS Magazine |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TK56A12N1,S4X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 120V 56A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 28A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 60 V
Description: MOSFET N-CH 120V 56A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 28A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 60 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.82 EUR |
| 50+ | 2.92 EUR |
| 100+ | 2.63 EUR |
| TK56A12N1,S4X |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 120V 112A 3-Pin(3+Tab) TO-220SIS Magazine
Trans MOSFET N-CH Si 120V 112A 3-Pin(3+Tab) TO-220SIS Magazine
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)